The injection photo diode on the basis of nSi-nCdS-n+CdS heterostructures

Authors

  • I. B. Sapaev Physical Technical Institute of the Academy of Sciences of the Republic of Uzbekistan (Tashkent)

Keywords:

heterostructure, film, spectrum, injection

Abstract

It is shown that the nSi-nCdS-n+CdS heterostructures in operative (carrying) direction of current, while being exposed to low intensity radiation, operate as injection photodiodes. Their current sensitivity is Sλ ≈ 2.12 A/W  at λ = 0.625 µm, which effectively represents a 4.2 increase in compare to spectral sensitivity of the ideal photo receiver at small wavelength of irradiation.

 

 

Author Biography

  • I. B. Sapaev, Physical Technical Institute of the Academy of Sciences of the Republic of Uzbekistan (Tashkent)
    с.н.с.

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Published

2017-07-21

Issue

Vol. 11 No. 3 (2013): Фізична інженерія поверхні

Section

Статті

License

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How to Cite

The injection photo diode on the basis of nSi-nCdS-n+CdS heterostructures. (2017). Journal of Surface Physics and Engineering, 11(3), 260-262. https://periodicals.karazin.ua/pse/article/view/8756