Study of background radiation and its possibility limitations in the semiconductor ionization system

Authors

Keywords:

image converter, semiconductor electrode, ionization chamber, gas-discharge gap, semiinsulating gallium arsenide, photodetector, volt-ampere characteristic, photocurrent, pulse duration, impulse voltage

Abstract

Ergashev Results of experimental exploration phenomenon in plane gas discharge cell with semiconductor electrode reduces in the article. Possibility of limitation of background, which appears the hindrance for raising of contrast gratuity representation was shown.

 

 

Author Biographies

  • Х. Т. Йулдашев, Ferghana Polytechnical Institute
    с.н.с.
  • Ш. С. Ахмедов, Ferghana Polytechnical Institute
    с.н.с.
  • У. С. Рустамов, Ferghana Polytechnical Institute
    с.н.с.
  • К. М. Эргашев, Ferghana Polytechnical Institute
    с.н.с.

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Published

2017-07-19

Issue

Vol. 2 No. 1 (2017): Журнал фізики та інженерії поверхні

Section

Статті

License

У відповідності з типовим шаблоном.

How to Cite

Study of background radiation and its possibility limitations in the semiconductor ionization system. (2017). Journal of Surface Physics and Engineering, 2(1), 44-48. https://periodicals.karazin.ua/pse/article/view/8742

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