Doping by silicon and photovoltaic properties of thin thulium sesquisulfide films

Abstract

The alloying of thin films θ-Tm2S3 is carried out by atoms of Si. In the field of temperatures 90— 500 K temperature dependences of specific resistance and thermo EMF of the alloyed films are mea sured. Spectral dependences of photoconductivity and photo EMF in the field of energy of photons 0.2—3.3 эВ are investigated. It is suggested that in the process of photoconductivity an es sen tial role play acceptor levell, formed by vacancies in a cationic sublattice, at their compensation by atoms of silicon.