Witching current and voltage with heating bes pe re hod nyh polycrystalline silicon doped with alkali me tals in region of inter-grain boundarie

Abstract

The effect of changing the polarity of the voltage and current direction in a uniformly heated bes pe re hodnyh samples of polycrystalline silicon doped with alkali metals in the grain boundaries, occurring as a result of the joint manifestations of the processes of emission and capture of carriers in deep ener gy states due to defects at the grain boundaries and the migration of atoms in this area dissolved in silicon oxygen.