Piezoresistive effect in polycrystalline semiconductors in view of longitudinal and transverse surface electronic states

Authors

Keywords:

polycrystalline semiconductors, impedance, area of spatial charges, longitudinal and transversal potential barriers, superficial states, coefficient of tenzosensitivity

Abstract

An impedance and coefficient of tenzosensitivity of polycrystalline semiconductors is theoretically calculated taking into account the deposit of modulation transversal subsurface area of spatial charges  crystalline grains under the action of mechanical deformation and influence of transversal surface state, participating in forming of perpendicular to the direction of current potential barriers.

 

 

Author Biographies

  • Х. М. Сулаймонов, Ferghana Polytechnical Institute
    С.н.с.
  • Н. Х. Юлдашев, Ferghana Polytechnical Institute
    С.н.с.

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Published

2017-02-24

Issue

Vol. 13 No. 3 (2015): Фізична інженерія поверхні

Section

Статті

License

У відповідності з типовим шаблоном.

How to Cite

Piezoresistive effect in polycrystalline semiconductors in view of longitudinal and transverse surface electronic states. (2017). Journal of Surface Physics and Engineering, 13(3), 318-324. https://periodicals.karazin.ua/pse/article/view/8010