Changes of potential barriers of low-dimensional thin film p-CdTe conditions of external influences

Authors

Keywords:

photosensitivity, short circuit current, potential barrier, the photo-EMF, corona discharge, electric conductivity deeper level, built-in field

Abstract

The specters of short circuit current in p-CdTe-SiO2-Si structure according to the magnitude of external crown discharge in static régime have been investigated. It’s observed the shift of specters it the short-wave area due to the energy of optic activation of deep level has changed. The model for the distribution of spatial deformulating potential and energetic distribution of carriers is offered.

Author Biographies

  • Н. Э. Алимов, Ferghana State University
    Проф.
  • С. М. Зайнолобиддинова, Ferghana State University
    Н. с.
  • С. М. Отажонов, Ferghana State University
    Проф.
  • М. М. Халилов, Ferghana State University
    Проф.
  • Д. А. Юсупова, Ferghana State University
    Н. с.
  • Ш. Якубова, Ferghana State University
    Н. с.

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Published

2016-06-24

Issue

Vol. 1 No. 1 (2016): Журнал фізики та інженерії поверхні

Section

Статті

License

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How to Cite

Changes of potential barriers of low-dimensional thin film p-CdTe conditions of external influences. (2016). Journal of Surface Physics and Engineering, 1(1), 52–56. https://periodicals.karazin.ua/pse/article/view/6093

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