Phase portraits of deformation effects in semiconductors in the pulsed mode

Authors

  • М. Г. Дадамирзаев Наманганский инженерно-педагогический институт Узбекистан Физико-технический институт Академии наук РУз (Ташкент) Узбекистан
  • А. Г. Гулямов Наманганский инженерно-педагогический институт Узбекистан

Keywords:

thin-film effect, the phase portrait, relaxation resistance tensosensitivity in pulsed mode

Abstract

Investigated currents in compensated p-Si <Ni> exposed rectangular pulse of hydrostatic pressure. The process of establishing and studied by the method of phase trajectories. It is shown that the phase trajectories can be considered as a thermodynamic cyclic process. These thermodynamic cycles of deformation effects in semiconductors is convenient to represent the phase portrait that education of the totality of izoprotsessov.

 

 

Author Biographies

  • М. Г. Дадамирзаев, Наманганский инженерно-педагогический институт Узбекистан Физико-технический институт Академии наук РУз (Ташкент) Узбекистан
    с.н.с.
  • А. Г. Гулямов, Наманганский инженерно-педагогический институт Узбекистан
    с.н.с.

Published

2012-10-03

How to Cite

Phase portraits of deformation effects in semiconductors in the pulsed mode. (2012). Journal of Surface Physics and Engineering, 10(4), 371-374. https://periodicals.karazin.ua/pse/article/view/10140

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