Ultrathin ZnO nanowires fabricated by using low-temperature pulsed laser deposition

Abstract

Recently, numerous devices use ZnO nanowires (NWs) as building blocks, for example, light emitters, pressure and gas sensors, resonators and many others. However, for integrations of the NWs into such devices, a high level of NW diameter control is needed. In this work, an opportunity to adjust the NW diameter by using differently doped by Al or Ga seed layers is presented. Moreover, a change of the doping concentrations allows to optimize the growth temperature. Thus, ultrathin NWs, i.e. with a diameter of d < 10 nm can be fabricated by using temperature of T = 400°C. This temperature is far below than those typically used for the fabrication of NWs by pulsed laser deposition