Comparative Analysis of Incomplete Ionization Effects in P-SiC/n-Ga₂O₃ and P-GaN/n-Ga₂O₃ Heterojunctions Over 77–400 K. East Eur. J. Phys. [Internet]. 2026 Sep. 7 [cited 2026 Oct. 25];(3):596-607. Available from: https://periodicals.karazin.ua/eejp/article/view/29073