“Modeling and Theoretical Study of P-N Heterojunctions Based on CdTe Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties”. East European Journal of Physics, no. 1 (March 3, 2025): 211–216. Accessed October 24, 2026. https://periodicals.karazin.ua/eejp/article/view/24464.