“DFT Studies on Electronic, Elastic, Thermoelectric and Optical Properties of New Half-Heusler XRhZ (X = V, Nb and Z = Si, Ge) Semiconductors”. East European Journal of Physics, no. 1 (March 5, 2024): 294–307. Accessed October 24, 2026. https://periodicals.karazin.ua/eejp/article/view/22616.