Element of non-volatile memory based on quantum dots

Abstract

This paper proposes a perspective flash memory element which is used as a storage cell array of self-assembled quantum dots as an intermediate layer in the structure of a field effect transistor with modulated doping. Described the physical basis of information storage in the proposed memory cell. A schematic structure of the element and its operation of recording, reading and erasing of information storage studied based on GaAs / AlGaAs MODFET transistor structure. The structure of the layer of quantum dots is proposed to grow on the basis of the principle of self-consistent growth of Stransky-Krastanov. The rewriting cycle in a memory cell based on a quantum dot is performed by changing the gate voltage, as well as in traditional flash memory.