1.
Zozulia VO, Botsula OV, Prykhodko KH. The impact of doping on the efficiency of GaAs –diode with active graded GaInAs side border. radiophysics [Internet]. 2023Dec.26 [cited 2026Feb.2];(39):27-5. Available from: https://periodicals.karazin.ua/radiophysics/article/view/24697