The kinetics of phase formation in system MoSi2-W under heating at temperature 1500—1800 °C
Keywords:
сoating, silicide, diffusion, heat resistance, tungsten, molibden, niobium, siliconAbstract
The kinetics of phase redistribution in the MoSi2-W system has been investigated in the temperature range 1500—1800 °С. Kinetic parameters for growth of low silicides (Mo, W)5Si3 and loss of the highest silicide MoSi2 were determined depending on the temperature of oxidation. It isthat stability of multicomponent and multiphase systems MoSі2-W exceeds stability system MoSі2-Mo and WSі2-W.
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2017-07-05
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The kinetics of phase formation in system MoSi2-W under heating at temperature 1500—1800 °C. (2017). Journal of Surface Physics and Engineering, 12(2), 219-222. https://periodicals.karazin.ua/pse/article/view/8599