Mechanism of current transport in heterojunctions p-Cu2ZnSnS4/n-Si

Abstract

Studied the electrical properties of heterojunctions anizo-type p-Cu2ZnSnS4/n-Si, received sulfurization base metal layers previously deposited on a silicon substrate. We discuss the current-voltage characteristics and established the dominant mechanism of current-voltage direct at (3kT/e < V < 0.7 eV) dominated tunnel-recombination processes involving defective conditions at the interface of heterojunction, increasing the voltage (V > 0.8 V). Newman dominated tunneling mechanism. Reverse current through the studied heterojunctions analyzed in the framework of current-tunneling mechanism.