Basic provisions of the high local scanning microwave heating of semiconductors and dielectrics theory

Abstract

In this work, the previous theoretical and experimental researches of local microwave heating of semiconductors, dielectrics and biological objects are improved. As a result, the provisions evaluating the dependence of the kinetics and local heating from duration of microwave pulse, the thermodynamic characteristics of the object and the geometry of the tip of the microwave probe are set forth. It is shown that with the spherical shape of the tip the localization of the temperature  setting in the surface region of the object under the microwave probe is characterized by a small change in volume of a micron (about 1 mcm3) with a radius of the sphere from 1 to about  100 microns. With a radius of less than 1 micron the sphere localization becomes submicron sized and improves with decrease in the radius. The duration of exposure has little effect on the localization if the edge has a spherical shape. With the tip of the conical shape there is a direct dependence of the localization from the radius of the tip and significant delocalization with increase of the exposure duration. Separately the dependences of kinetics from the physical parameters of the object are presented.