Electrical and photoelectric properties of hybrid structures based on porous silicon and zinc oxide

Abstract

Zinc oxide nanostructured arrays were grown on porous silicon surface by electrochemical deposition method. The influence of temperature on the morphology of the grown ZnO layers is confirmed. Voltage-current curves of obtained hybrid structures are investigated. Time and spectral dependencies of the photoresponse of these structures are studied for a wide range of electromagnetic radiation. The results are interpreted in the frame of the qualitative model, which suggests that different band gap value for zinc oxide, porous silicon and silicon substrate ensure efficient UV, visible and IR absorption. Obtained data widen the perspective of using porous silicon based structures and ZnO in photoelectronics.