Быткин СВ, Критская ТВ. Effect of isovalent doping of Si by germanium on the impurity-defect complexes formation probability in the p+n structures base irradiated by α-particles. ЖФІП [Internet]. 2019Aug.7 [cited 2026Feb.1];3(2):57-. Available from: https://periodicals.karazin.ua/pse/article/view/13665