Быткин, С. В., and Т. В. Критская. “Effect of Isovalent Doping of Si by Germanium on the Impurity-Defect Complexes Formation Probability in the p+n Structures Base Irradiated by α-Particles”. Journal of Surface Physics and Engineering 3, no. 2 (August 7, 2019): 57-67. Accessed December 5, 2025. https://periodicals.karazin.ua/pse/article/view/13665.