Маматкаримов, О. О., Хамидов, Р. Х., Жабборов, Р. Г., Туйчиев, У. А. and Кучкаров, Б. Х. (2012) “Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure”, Journal of Surface Physics and Engineering, 10(4), pp. 418 - 422. Available at: https://periodicals.karazin.ua/pse/article/view/10162 (Accessed: 17July2024).