Berkutov IB, Andrievskii VV, Komnik YF, Kolesnichenko YA, Berkutova AI, Mironov OA, Gleyzer NV. he characteristic parameters of charge carriers in the p-type Si0.2Ge0.8 quantum well with two subbands occupied. Physics [Internet]. 2016Dec.28 [cited 2025Jan.4];0(23):52-6. Available from: https://periodicals.karazin.ua/physics/article/view/7775