Berkutov IB, Andrievskii VV, Komnik YF, Kolesnichenko YA, Berkutova AI, Mironov OA, Gleyzer NV. he characteristic parameters of charge carriers in the p-type Si0.2Ge0.8 quantum well with two subbands occupied. Physics [інтернет]. 28, Грудень 2016 [цит. за 19, Травень 2024];0(23):52-6. доступний у: https://periodicals.karazin.ua/physics/article/view/7775