An ab Initio Calculations of Single-Electron Transistor Based Single Walled Carbon Nanotube of Ultra-Small Diameter
Abstract
In this paper, we have investigated the charge stability diagram and conductance dependence on source drain bias and gate voltage of carbon nanotube based single electron transistor (SET) by using first principle calculations. All calculations have been executed by using ATK-VNL simulation package based on density functional theory (DFT). We have applied these calculations for carbon nanotube based SET; the nanotube has been placed just above the dielectric ( ) in between the source and drain electrodes of gold. The single walled carbon nanotube has been used in SET, which have ultra-small diameter and (4,0) configuration. The addition energy of the device has been calculated, which can be defined as the difference between the electron affinity, and ionization energies. The calculated values of energies have been found to be -10.17694 eV and -11.04034 eV for isolated phase and SET environment respectively. In electrostatic environment, the results were showing the regularization of molecular energy levels and therefore the addition energy reduced. The calculations for additional energies, variations of total energies to that of the gate voltages and charge stability diagram (CSD) have also been done in this study.
Downloads
References
G.E. Moore, Progress in digital integrated electronics. Electron Devices Meeting, 11–13 (1975).
S.I. Garduño, A. Cerdeira, M. Estrada, J. Alvarado, V. Kilchystka, and D. Flandre, J. Applied Physics, 109(8), 084524 (2011), https://doi.org/10.1063/1.3575324.
K.K. Likharev, Proceedings of the IEEE, 87, 606-632 (1999), https://doi.org/10.1109/5.752518.
M.A. Kastner, Rev. Mod. Phys. 64, 849-858 (1992), https://doi.org/10.1103/RevModPhys.64.849.
Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, J. Physics: Condensed Matter, 14, 995-1033 (2002), https://doi.org/10.1088/0953-8984/14/39/201.
T.A. Fulton, and G.J. Dolan, Physics Review Letters, 59, 109 (1987), https://doi.org/10.1103/PhysRevLett.59.109.
A. K. Geim, and K.S. Novoselov, Nature Materials, 6, 183–191 (2007), https://doi.org/10.1142/9789814287005_0002.
S. Iijima, Nature, 354, 56-58 (1991), https://doi.org/10.1038/354056a0.
V.N. Popov, Materials Science and Engineering, 43, 61–102 (2004), https://doi.org/10.1016/j.mser.2003.10.001.
M.S. Dresselhaus, G. Dresselhaus, Ph. Avouris (Eds.), Carbon nanotubes: Synthesis, Structure, Properties, and Applications, (Springer, 2001), pp. 287-292.
A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature, 424, 654–657 (2003), https://doi.org/10.1038/nature01797.
A. Naderi, and S.A. Ahmadmiri, ECS Journal of Solid State Science and Technology, 5, 63-68 (2016), https://doi.org/10.1149/2.0061607jss.
V.K. Hosseini, D. Dideban, Md. T. Ahmadi, and R. Ismail, Int. J. Electronics and Communications, 90, 97-102 (2018), https://doi.org/10.1016/j.aeue.2018.04.015.
C. Wasshuber, in: Proceedings of 40th Design Automation Conference, pp. 274-275, (2003), https://doi.org/10.1145/775832.775901.
S.J. Tans, A.R.M. Verschueren, and C. Dekker, Nature, 393, 49–52 (1998), https://doi.org/10.1038/29954.
Atomistic Toolkit-Virtual Nanolab. Quantumwise A/S, http://quantumwise.com/. Accessed 8th September 2017.
M. Brandbyge, J.-L. Mozos, P. Ordejón, J. Taylor, and K. Stokbro, Phys. Rev. B, 65, 165401 (2002), https://doi.org/10.1103/PhysRevB.65.165401.
J. Robertson, Eur. Phys. J. Appl. Phys., 28, 265–291 (2004), https://doi.org/10.1051/epjap:2004206.
http://docs.quantumwise.com/tutorials/work_function_ag_100/work_function_ag_100.html, 12th September 2017.
Z.A.K. Durrani, Single-electron devices and circuits in silicon, (World Scientific, 2010).
M. Devoret, and H. Grabert, in: Single Charge Tunneling, (Plenum Publishing Corporation, 1992), pp. 1–19.
H. Grabert, G.-L. Ingold, M.H. Devoret, D. Est`eve, H. Pothier, and C. Urbina, Zeitschrift für Physik B Condensed Matter, 84, 143–155 (1991), https://doi.org/10.1007/BF01453767.
L. Kouwenhoven, N.C. van der Vaart, A. Johnson, W. Kool, C. Harmans, J. Williamson, A. Staring, and C. Foxon, Zeitschrift für Physik B Condensed Matter, 85, 367–373, (1991), https://doi.org/10.1007/BF01307632.
Copyright (c) 2020 Sraja Chauhan, Ajay Singh Verma
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
