“Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN P–n Junctions: A SCAPS-1D Study”. East European Journal of Physics, no. 2 (June 10, 2026): 251–259. Accessed October 24, 2026. https://periodicals.karazin.ua/eejp/article/view/28393.