“Comparative Analysis of Incomplete Ionization Effects in P-SiC N-Ga₂O₃ and P-GaN N-Ga₂O₃ Heterojunctions Over 77–400 K”. 2026. East European Journal of Physics, no. 3 (September): 596-607. https://doi.org/10.26565/2312-4334-2026-3-55.