Ahmed BS, Anissa B, Radouan D, Al Bouzieh N, Durukan IK, Amrane N. DFT Studies on Electronic, Elastic, Thermoelectric and Optical Properties of New Half-Heusler XRhZ (X = V, Nb and Z = Si, Ge) Semiconductors. East Eur. J. Phys. [Internet]. 2024Mar.5 [cited 2024May14];(1):294-07. Available from: https://periodicals.karazin.ua/eejp/article/view/22616