Madatov RS, Alekperov A, Nurmammadova F, Ismayilova NA, Jabarov SH. Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties. East Eur. J. Phys. [Internet]. 2024Mar.5 [cited 2024May13];(1):322-6. Available from: https://periodicals.karazin.ua/eejp/article/view/22516