Rakhmanov, M.A., I.G. Tursunov, O.O. Mamatkarimov, N.Yu. Sharibaev, and S.S. Sharipbaev. “Modeling the Density-of-States Spectrum Under Strain in Doped Silicon p‑Si<B, Mn&gt;”. East European Journal of Physics, no. 2 (June 10, 2026): 245-250. Accessed June 11, 2026. https://periodicals.karazin.ua/eejp/article/view/28431.