Abdullayev, Jo‘shqin Sh., I.B. Sapaev, Jonibek Sh. Abdullayev, G.A. Abdikayimova, Sh.Sh. Akhmadaliev, M.M. Gulomova, Sh.O. Kholbekov, and Kudrat Sh. Ruzmetov. “Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study”. East European Journal of Physics, no. 2 (June 10, 2026): 251-259. Accessed June 11, 2026. https://periodicals.karazin.ua/eejp/article/view/28393.