Arzikulov, E.U., M. Radzhabova, Xue Cui, Liu Teng, S.N. Srajev, N. Mamatkulov, Sh.J. Quvondiqov, Vasiliy O. Pelenovich, and B. Yang. “Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K”. East European Journal of Physics, no. 4 (December 8, 2024): 305-310. Accessed December 12, 2024. https://periodicals.karazin.ua/eejp/article/view/24603.