Arzikulov, E., M. Radzhabova, X. Cui, L. Teng, S. Srajev, N. Mamatkulov, S. Quvondiqov, V. O. Pelenovich, and B. Yang. “Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K”. East European Journal of Physics, no. 4, Dec. 2024, pp. 305-10, doi:10.26565/2312-4334-2024-4-34.