Abdullayev, J. S., Sapaev, I., Abdullayev, J. S., Abdikayimova, G., Akhmadaliev, S., Gulomova, M., Kholbekov, S. and Ruzmetov, K. S. (2026) “Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study”, East European Journal of Physics, (2), pp. 251-259. doi: 10.26565/2312-4334-2026-2-27.