1. Arzikulov E., Radzhabova M., Cui X., Teng L., Srajev S., Mamatkulov N., Quvondiqov S., Pelenovich V.O., Yang B. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K // East European Journal of Physics. 2024. № 4. C. 305-310.