[1]
Murodov, J.X., Yuldashev, S.U., Arslanov, A.O., Botirova, N.U., Xudoyqulov, J.S., Sharipova, R.S., Nusretov, R.A., Nebesniy, A.A. and Pirimmatov, M.P. 2025. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications. East European Journal of Physics. 3 (Sep. 2025), 348-352. DOI:https://doi.org/10.26565/2312-4334-2025-3-34.